
Electronic Component Ssn65r360s2er Power Mosfet SMD Transistor for Switching Power
Overview Package Size30.00cm * 20.00cm * 0.20cm Package Gross Weight0.500kg .lc-a-img { position: relative; width: 100%;
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Basic Info.
| Model NO. | SSN65R360S2ER |
| Certification | RoHS, ISO9001 |
| Manufacturing Technology | Discrete Device |
| Material | Power Semiconductor |
| Model | Ssn65r360s2er |
| Package | to-Dfn4l |
| Signal Processing | Power Switch Control |
| Type | N-Type Semiconductor |
| Polarity | N |
| Special Function | Fast Recovery Diode |
| Number of Pins | 3pins |
| Approval Standards | Automotive |
| Transport Package | Cartons |
| Specification | 1*2cm |
| Trademark | SUPER |
| Origin | China |
| HS Code | 8541290000 |
| Production Capacity | 10000 Pieces Per Year |
Packaging & Delivery
Package Size30.00cm * 20.00cm * 0.20cm Package Gross Weight0.500kgProduct Description
NOVA IMPORT&EXPORT TRADE CO.,LTDCollaborated with a professional design and operation team boasting more than 15 years of experience in the power semiconductor industry, the NOVA team is committed to the R&D and innovation of advanced power semiconductor devices.Our high-voltage MOSFETs adopt the internationally mainstream multi-layer epitaxy process, featuring outstanding reliability and stability. They are widely applied in UPS, server power supplies, charging piles, OBC, and other industrial markets.
Our SJ-IGBT is a next-generation IGBT with faster switching speed than superjunction MOSFETs. It is in mass production and protected by multiple patents, and is now widely adopted in key sectors including high-power computing power supplies, as well as high-frequency bidirectional power supplies for UPS and energy storage inverters.
NOVA operates under a Fabless business model, with chip manufacturing, testing, and packaging entrusted to well-known manufacturers at home and abroad, ensuring high-quality and stable production capacity.
Cutting-edge Technology: Multi-layer Epitaxy Process
IEEE EDL (Electron Device Letters) Paper Publication Background Supplier
Higher current density, Lower switching loss, and Smaller package size.
High-Performance MOSFET & IGBT | 15+ Years Industry Experience Team
100% Original | Reliable Supply | Fast Global Shipping
Stock Available | NO MINIMAL ORDER | P2P Replacement ServiceOur LaboratoryProduct DescriptionDescriptionFeaturesBenefitsThe SJ-FET represents a groundbreaking advancement in the realm of high-voltage MOSFETs. By employing a cutting-edge charge balance mechanism, it delivers exceptional low on-resistance and a remarkably lower gate charge performance. This state-of-the-art technology is meticulously designed to minimize conduction losses, enhance switching performance, and sustain extreme dv/dt rates and elevated avalanche energy. SJ-FET is ideally suited for diverse AC/DC power conversions in switching mode operations, ensuring heightened efficiency and performance.1. Advanced Multi-Epi process SJ-FET
2. Robust 700V @TJ = 150 ºC
3. Typical RDS(on) = 0.34Ω for superior efficiency
4. Exceptionally Low Gate Charge (typ. Qg= 16.3nC)
5. Fully avalanche tested for reliability
6. Built-in Zener diode for enhanced ESD robustness (>2kV HBM)1. Unmatched performance in its class
2. Facilitates higher power density designs, contributing to BOM savings and lower
assembly costs, enhancing cost-efficiency
3. User-friendly driving and parallel capabilities
4. Improved production yield by mitigating ESD-related failures
5. Fewer production complications and reduced field return rates
6. Simplified selection of optimal parts for precise design tuningSpecification
| Model no. | SSN65R360S2ER |
| Catagory | Mosfet |
| VDSS | 650V |
| I | 12A |
| VGS | 3.5V |
| Package Type | TO-DFN4L |
| Package | Reel |
| Unit gross weight | 0.25g |
| QTY | 1000/box |
| Material | Silicon |
| HS Code | 8541290000 |
| Transport Package | Tube |
| Manufacturing Technology | Discrete Device |
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