Electronic Component Ssn65r360s2er Power Mosfet SMD Transistor for Switching Power

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Electronic Component Ssn65r360s2er Power Mosfet SMD Transistor for Switching Power

Electronic Component Ssn65r360s2er Power Mosfet SMD Transistor for Switching Power

Overview Package Size30.00cm * 20.00cm * 0.20cm Package Gross Weight0.500kg .lc-a-img { position: relative; width: 100%;

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DESCRIPTION

  • Overview
  • Company Profile
  • Our Laboratory
  • Product Description
  • Specification
  • Application Scenario
  • Certifications
  • Transportation & Payment
  • FAQ
Overview
Basic Info.
Model NO. SSN65R360S2ER
Certification RoHS, ISO9001
Manufacturing Technology Discrete Device
Material Power Semiconductor
Model Ssn65r360s2er
Package to-Dfn4l
Signal Processing Power Switch Control
Type N-Type Semiconductor
Polarity N
Special Function Fast Recovery Diode
Number of Pins 3pins
Approval Standards Automotive
Transport Package Cartons
Specification 1*2cm
Trademark SUPER
Origin China
HS Code 8541290000
Production Capacity 10000 Pieces Per Year
Packaging & Delivery
Package Size30.00cm * 20.00cm * 0.20cm Package Gross Weight0.500kg
Product Description

Company Profile

NOVA IMPORT&EXPORT TRADE CO.,LTDCollaborated with a professional design and operation team boasting more than 15 years of experience in the power semiconductor industry, the NOVA team is committed to the R&D and innovation of advanced power semiconductor devices.
Our high-voltage MOSFETs adopt the internationally mainstream multi-layer epitaxy process, featuring outstanding reliability and stability. They are widely applied in UPS, server power supplies, charging piles, OBC, and other industrial markets.
Our SJ-IGBT is a next-generation IGBT with faster switching speed than superjunction MOSFETs. It is in mass production and protected by multiple patents, and is now widely adopted in key sectors including high-power computing power supplies, as well as high-frequency bidirectional power supplies for UPS and energy storage inverters.
NOVA operates under a Fabless business model, with chip manufacturing, testing, and packaging entrusted to well-known manufacturers at home and abroad, ensuring high-quality and stable production capacity.

Cutting-edge Technology: Multi-layer Epitaxy Process
IEEE EDL (Electron Device Letters) Paper Publication Background Supplier

Higher current density, Lower switching loss, and Smaller package size.
High-Performance MOSFET & IGBT | 15+ Years Industry Experience Team
100% Original | Reliable Supply | Fast Global Shipping

Stock Available | NO MINIMAL ORDER | P2P Replacement ServiceOur Laboratory

Product Description

DescriptionFeaturesBenefitsThe SJ-FET represents a groundbreaking advancement in the realm of high-voltage MOSFETs. By employing a cutting-edge charge balance mechanism, it delivers exceptional low on-resistance and a remarkably lower gate charge performance. This state-of-the-art technology is meticulously designed to minimize conduction losses, enhance switching performance, and sustain extreme dv/dt rates and elevated avalanche energy. SJ-FET is ideally suited for diverse AC/DC power conversions in switching mode operations, ensuring heightened efficiency and performance.1. Advanced Multi-Epi process SJ-FET
2. Robust 700V @TJ = 150 ºC
3. Typical RDS(on) = 0.34Ω for superior efficiency
4. Exceptionally Low Gate Charge (typ. Qg= 16.3nC)
5. Fully avalanche tested for reliability
6. Built-in Zener diode for enhanced ESD robustness (>2kV HBM)1. Unmatched performance in its class
2. Facilitates higher power density designs, contributing to BOM savings and lower
assembly costs, enhancing cost-efficiency
3. User-friendly driving and parallel capabilities
4. Improved production yield by mitigating ESD-related failures
5. Fewer production complications and reduced field return rates
6. Simplified selection of optimal parts for precise design tuningSpecification
Model no.SSN65R360S2ER
CatagoryMosfet
VDSS650V
I12A
VGS3.5V
Package TypeTO-DFN4L
PackageReel
Unit gross weight0.25g
QTY1000/box
MaterialSilicon
HS Code8541290000
Transport PackageTube
Manufacturing TechnologyDiscrete Device
Application Scenario

Certifications

Transportation & Payment

FAQQ1: ARE YOU TRADER OR FACTORY?A1: We adopt the Fabless (waferless) model, focusing on in-depth research and development, and use top-tier foundries both domestically and internationally to ensure 100% performance and stability.Q2: MAY I HAVE SOME SAMPLES FOR TESTING?A2: Yes, we provide samples for testing and evaluation. To fully support your R&D and prototyping needs, we do not impose any quantity limitations on sample orders.Q3: WHAT ABOUT THE DELIVERY ?A3: The typical lead time is approximately 1-3 weeks after receiving payment. For many standard parts, we maintain stock and utilize a system to ensure timely delivery.Q4. HOW CAN WE GUARANTEE QUALITY?A4: Always a pre-production sample before mass production.Always a final inspection before shipment.Q5: WHAT ABOUT THE SHIPMENT TERMS ?A5: We offer FCA Shanghai. Alternatively, we collaborate with DHL, FedEx, TNT, and others for smaller quantities. You can choose the freight forwarder that suits you best. If you need, we could also assist you with shipment.

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