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Jul 03, 2023

The next generation of gate

Integrated circuits Nature Electronics volume 6, page 469 (2023)Cite this article The researchers built upon first-generation gate-all-around technology, which is currently in mass production, to

Integrated circuits

Nature Electronics volume 6, page 469 (2023)Cite this article

The researchers built upon first-generation gate-all-around technology, which is currently in mass production, to develop this second-generation technology. The gain in performance is attributed to the improved uniformity of the epitaxially grown source and drain contacts on very thin nanosheets, and to optimized metal gate deposition that reduces parasitic leakage, prevents damage to the dielectric layer and, minimizes the work function difference between the inner and outer gates. The 3 nm gate-all-around multi-bridge-channel FETs exhibited a 22% improvement in speed, a 34% reduction in power consumption and a 21% decrease in area compared with the 4 nm FinFET technology.

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Lishu Wu

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Correspondence to Lishu Wu.

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Wu, L. The next generation of gate-all-around transistors. Nat Electron 6, 469 (2023). https://doi.org/10.1038/s41928-023-01006-x

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Published: 26 July 2023

Issue Date: July 2023

DOI: https://doi.org/10.1038/s41928-023-01006-x

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