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Jun 27, 2023

Superconducting radiofrequency transistors

Power electronics Nature Electronics volume 6, page 470 (2023)Cite this article 156 Accesses Metrics details The HEMTs are based on indium gallium arsenide (InGaAs) and use superconducting

Power electronics

Nature Electronics volume 6, page 470 (2023)Cite this article

156 Accesses

Metrics details

The HEMTs are based on indium gallium arsenide (InGaAs) and use superconducting niobium-based contacts. At 4 K, the niobium-based contacts have a resistance of 37 Ω μm, about 20% lower than molybdenum-based contacts. A 70-nm-gate-length InGaAs HEMT exhibited (at 4 K) a unity gain cut-off frequency of 601 GHz and unity power gain cut-off frequency of 593 GHz. The researchers — who are based at the Korea Advanced Institute of Science and Technology, the Korea Basic Science Institute, the Korea Advanced Nano Fab Center and Korea National University — also show that the power dissipation of the routing circuits can be reduced by 41% using an interconnect based on niobium and III–V heterostructures.

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Nature Electronics https://www.nature.com/natelectron/

Matthew Parker

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Correspondence to Matthew Parker.

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Parker, M. Superconducting radiofrequency transistors. Nat Electron 6, 470 (2023). https://doi.org/10.1038/s41928-023-01007-w

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Published: 26 July 2023

Issue Date: July 2023

DOI: https://doi.org/10.1038/s41928-023-01007-w

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