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May 22, 2023

1.2kV 8.7mΩ SMD SiC mosfet for automotive

Infineon has used its latest silicon carbide die technology in a 1,200V mosfet for automotive on-board chargers and dc-dc converters. The snappily-named AIMBG120R010M1 comes in a 10 x 15 x 4.4mm

Infineon has used its latest silicon carbide die technology in a 1,200V mosfet for automotive on-board chargers and dc-dc converters.

The snappily-named AIMBG120R010M1 comes in a 10 x 15 x 4.4mm D2PAK-7L (7 lead TO263) package and handles 1.2kV across -55 to 175°C. Creepage is 5.89mm, suiting the device to 800V systems.

Its ‘Gen1p’ process has been created to improved the RDSon x area figure-of-merit, and in this package can achieve an Rds(on) of 8.7mΩ (20V gate, 25°C junction). Also at 25°C, the channel can handle 205A.

Switching losses 25% lower than the company’s first generation parts are claimed – total switching energy is 1.56mJ at 25°C rising to 2.09mJ at 175°C (see the data sheet for caveats).

Against spurious turn-on, the gate threshold is at least 4V and the Crss/Ciss ratio (reverse transfer capacitance / input capacitance) is low (16pF/5.7nF = 0.0028). Reliable turn-off at Vgate = 0V is claimed “without the risk of parasitic turn-ons. This allows for unipolar driving”, said infineon, which backs this up by specifying ‘off’-characteristics in the data sheet at Vgs=0V.

To ease driving, there is a separate Kelvin source connection (named ‘sense’) alongside the gate pad.

The die is mounted using diffusion soldering (branded ‘.XT’ technology) lowers junction temperature compared to the first generation, it added. Thermal resistance from mosfet or body diode junction to the case is typically 0.13K/W (0.17K/W max).

On the subject of the body diode, this is rated for commutation if the device is used as a synchronous rectifier, and can handle 208A peak and, at 25°C, up to 176A continuously.

For abuse conditions, the device is both avalanche-rated and short-circuit-rated.

Find the AIMBG120R010M1 product page here and its data sheet here